? semiconductor components industries, llc, 2000 november, 2000 rev. 1 1 publication order number: ntp12n50/d ntp12n50, ntb12n50 preferred device advance information power mosfet 12 amps, 500 volts nchannel to220 and d 2 pak designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drainsource voltage v dss 500 vdc draingate voltage (r gs = 1.0 m w ) v dgr 500 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc drain continuous continuous @ 100 c single pulse (t p 10 m s) i d i d i dm 12 10 42 adc total power dissipation derate above 25 c p d 202 1.61 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single draintosource avalanche energy starting t j = 25 c (v dd = 100 v, v gs = 10 vdc, i l = 12 a, l = 10 mh, r g = 25 w ) e as 720 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (note 1.) r q jc r q ja r q ja 0.62 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. 12 amperes 500 volts r ds(on) = 500 m w preferred devices are recommended choices for future use and best overall value. device package shipping ordering information ntp12n50 to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams and pin assignments ntx12n50 = device code ll = location code y = year ww = work week ntp12n50 llyww gate source drain drain ntb12n50 llyww gate source drain drain 1 2 3 4 d 2 pak case 418b style 2 ntb12n50 d 2 pak 50 units/rail ntb12n50t4 d 2 pak 800/tape & reel
ntp12n50, ntb12n50 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 500 583 vdc mv/ c zero gate voltage collector current (v ds = 500 vdc, v gs = 0 vdc) (v ds = 500 vdc, v gs = 0 vdc, t j =125 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss(f) i gss(r) 100 100 nadc on characteristics (note 2.) gate threshold voltage i d = 0.25 ma, v ds = v gs temperature coefficient (negative) v gs(th) 2.0 2.5 6.7 4.0 vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 6 adc) r ds(on) 380 500 mohm draintosource onvoltage (v gs = 10 vdc, i d = 12 adc) (v gs = 10 vdc, i d = 6 adc, t j = 125 c) v ds(on) 7.2 6.5 vdc forward transconductance (v ds = 15 vdc, i d = 6 adc) g fs 8.0 11 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1800 2520 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 620 870 transfer capacitance f = 1 . 0 mhz) c rss 40 80 switching characteristics (note 3.) turnon delay time t d(on) 12 20 ns rise time (v dd = 250 vdc, i d = 12 adc, v gs =10vdc t r 27 50 turnoff delay time v gs = 10 vdc, r g = 9.1 w ) t d(off) 52 100 fall time r g 9.1 w ) t f 35 70 gate charge q t 37 50 nc (v ds = 400 vdc, i d = 12 adc, q 1 8.0 (v ds 400 vdc , i d 12 adc , v gs = 10 vdc) q 2 12 q 3 20 sourcedrain diode characteristics forward onvoltage (note 2.) (i s = 12 adc, v gs = 0 vdc) (i s = 12 adc, v gs = 0 vdc, t j = 125 c) v sd 0.90 0.80 1.0 vdc reverse recovery time t rr 380 ns (i s 12 adc v gs 0 vdc t a 165 (i s = 12 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 215 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 3.9 m c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from the drain lead 0.25 from package to center of die) l d 3.5 4.5 nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s 7.5 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntp12n50, ntb12n50 http://onsemi.com 3 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
ntp12n50, ntb12n50 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntp12n50/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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